RDN150N20FU6

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

40W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Pbfree Code :

yes

Operating Temperature :

150°C TJ

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack

ECCN Code :

EAR99

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Published :

2006

Drain to Source Breakdown Voltage :

200V

Mount :

Through Hole

Packaging :

Bulk

Rds On (Max) @ Id, Vgs :

160m Ω @ 7.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

40W Tc

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1224pF @ 10V

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

15A