RDN120N25

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2006

Rds On (Max) @ Id, Vgs :

210m Ω @ 6A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Mounting Type :

Through Hole

Terminal Position :

Single

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

1224pF @ 10V

Drain-source On Resistance-Max :

0.21Ohm

Voltage - Rated DC :

250V

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

12A

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

4V @ 1mA

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Time@Peak Reflow Temperature-Max (s) :

10

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Vgs (Max) :

±30V

Packaging :

Bulk

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Mount :

Through Hole

JESD-609 Code :

e1

Avalanche Energy Rating (Eas) :

216 mJ

Case Connection :

Isolated

Transistor Application :

SWITCHING

Power Dissipation-Max :

40W Tc

Pbfree Code :

yes

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Operating Temperature :

150°C TJ

Pulsed Drain Current-Max (IDM) :

48A

Continuous Drain Current (ID) :

12A