RDN100N20

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Bulk

Case Connection :

Isolated

Voltage - Rated DC :

200V

Input Capacitance (Ciss) (Max) @ Vds :

543pF @ 10V

Current Rating :

10A

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

40A

Radiation Hardening :

No

Mounting Type :

Through Hole

Operating Temperature :

150°C TJ

Published :

2006

Lead Free :

Lead Free

Rise Time :

29ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

26 ns

Avalanche Energy Rating (Eas) :

120 mJ

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Continuous Drain Current (ID) :

10A

Time@Peak Reflow Temperature-Max (s) :

10

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e1

Number of Pins :

3

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Turn-Off Delay Time :

38 ns

Number of Elements :

1

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

13 ns

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

360m Ω @ 5A, 10V

Pin Count :

3

Mount :

Through Hole

Terminal Position :

Single

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

35W Tc

Vgs (Max) :

±30V