RD3T050CNTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

20A

Avalanche Energy Rating (Eas) :

1.83 mJ

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

29W Tc

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

760m Ω @ 2.5A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

5A

Vgs(th) (Max) @ Id :

5.25V @ 1mA

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

DS Breakdown Voltage-Min :

200V

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

200V

Terminal Position :

Single

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

5A Tc

FET Type :

N-Channel

Factory Lead Time :

16 Weeks

Surface Mount :

yes

Drain-source On Resistance-Max :

0.76Ohm

Packaging :

Tape and Reel (TR)