RD3T100CNTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.182Ohm

Factory Lead Time :

16 Weeks

Vgs (Max) :

±30V

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

200V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Rds On (Max) @ Id, Vgs :

182m Ω @ 5A, 10V

Vgs(th) (Max) @ Id :

5.25V @ 1mA

Drain Current-Max (Abs) (ID) :

10A

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

40A

DS Breakdown Voltage-Min :

200V

Power Dissipation-Max :

85W Tc

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

10A Tc

ECCN Code :

EAR99

Terminal Position :

Single

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

7.35 mJ

FET Type :

N-Channel