RD3T075CNTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Reach Compliance Code :

not_compliant

Drain to Source Voltage (Vdss) :

200V

Number of Elements :

1

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Power Dissipation-Max :

52W Tc

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Factory Lead Time :

16 Weeks

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

325m Ω @ 3.75A, 10V

Vgs (Max) :

±30V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

5.25V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.325Ohm

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

755pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

4.13 mJ

Drain Current-Max (Abs) (ID) :

7.5A

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

200V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

30A

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V