RD3H200SNFRATL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

28m Ω @ 20A, 10V

Drain Current-Max (Abs) (ID) :

20A

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

Automotive, AEC-Q101

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

20W Tc

Drain to Source Voltage (Vdss) :

45V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

DS Breakdown Voltage-Min :

45V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.04Ohm

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Factory Lead Time :

16 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 10V

Transistor Element Material :

SILICON

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

40A