RD3H045SPTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

4.5A

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

9A

Drain to Source Voltage (Vdss) :

45V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

155m Ω @ 4.5A, 10V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Surface Mount :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.26Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Power Dissipation-Max :

15W Tc

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

45V

Vgs(th) (Max) @ Id :

3V @ 1mA

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Mounting Type :

Surface Mount