RD3H080SPTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Drain-source On Resistance-Max :

0.147Ohm

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 10V

Drain Current-Max (Abs) (ID) :

8A

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

45V

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

45V

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 5V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Transistor Application :

SWITCHING

FET Type :

P-Channel

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Power Dissipation-Max :

15W Tc

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 1mA

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

91m Ω @ 8A, 10V

Pulsed Drain Current-Max (IDM) :

16A

Factory Lead Time :

16 Weeks

Mounting Type :

Surface Mount

Terminal Position :

Single