R8006KNXC7G

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

Transistor Polarity :

N-Channel

Subcategory :

MOSFETs

Rise Time :

30 ns

Power Dissipation :

52W

Packaging :

Tube

Series :

-

Power Dissipation (Max) :

52W (Tc)

Package :

Cut Tape (CT)

Number of Channels :

1 Channel

RoHS :

Details

Vgs(th) (Max) @ Id :

4.5V @ 4mA

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

Brand :

Rohm Semiconductor

Vgs (Max) :

±20V

Channel Mode :

Enhancement

FET Feature :

-

MSL :

MSL 1 - Unlimited

Manufacturer :

Rohm Semiconductor

Qualification :

-

Product Status :

Active

Product Type :

MOSFET

Maximum Operating Temperature :

+ 150 C

Current - Continuous Drain (Id) @ 25°C :

6A (Ta)

Transistor Type :

Power MOSFET

Channel Type :

N Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

22 nC @ 10 V

Continuous Drain Current Id :

6A

Supplier Device Package :

TO-220FM

Rds On (Max) @ Id, Vgs :

900mOhm @ 3A, 10V

Configuration :

Single

Mounting Style :

Through Hole

Operating Temperature :

150°C (TJ)

Drain to Source Voltage (Vdss) :

800 V

Mounting Type :

Through Hole

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

650 pF @ 100 V