R6535ENZ4C13

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Minimum Operating Temperature :

- 55 C

Rds On (Max) @ Id, Vgs :

115mOhm @ 18.1A, 10V

RoHS :

Details

Vgs(th) (Max) @ Id :

4V @ 1.21mA

Brand :

Rohm Semiconductor

Channel Type :

N Channel

Subcategory :

MOSFETs

Power Dissipation (Max) :

379W (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Supplier Device Package :

TO-247G

Manufacturer :

Rohm Semiconductor

Transistor Type :

1 N-Channel

Packaging :

Tube

Package :

Tube

Mounting Style :

Through Hole

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

110 nC @ 10 V

Continuous Drain Current Id :

35A

FET Feature :

-

Operating Temperature :

150°C (TJ)

Transistor Polarity :

N-Channel

Configuration :

Single

Vgs (Max) :

±20V

Number of Channels :

1 Channel

Product Status :

Active

Drain to Source Voltage (Vdss) :

650 V

Input Capacitance (Ciss) (Max) @ Vds :

2600 pF @ 25 V

Series :

-

FET Type :

N-Channel

Product Type :

MOSFET

MSL :

MSL 1 - Unlimited

Product Category :

MOSFET

Maximum Operating Temperature :

+ 150 C

Qualification :

-

Package / Case :

TO-247-3

Current - Continuous Drain (Id) @ 25°C :

35A (Tc)

Power Dissipation :

379W

Channel Mode :

Enhancement

Rise Time :

85 ns