R6530ENZC8

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

730 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

650V

Pulsed Drain Current-Max (IDM) :

90A

Rds On (Max) @ Id, Vgs :

140m Ω @ 14.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

86W Tc

Drain-source On Resistance-Max :

0.14Ohm

Vgs(th) (Max) @ Id :

4V @ 960μA

Number of Terminations :

3

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Package / Case :

TO-3P-3 Full Pack

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

30A

DS Breakdown Voltage-Min :

650V

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2.1nF @ 25V

Case Connection :

Isolated