R6535ENZC8

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

DS Breakdown Voltage-Min :

650V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

35A

Avalanche Energy Rating (Eas) :

867 mJ

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

650V

Package / Case :

TO-3P-3 Full Pack

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

105A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2.6nF @ 25V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Case Connection :

Isolated

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Power Dissipation-Max :

102W Tc

Rds On (Max) @ Id, Vgs :

115m Ω @ 18.1A, 10V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Vgs(th) (Max) @ Id :

4V @ 1.21mA

Drain-source On Resistance-Max :

0.115Ohm