QS8J4TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Published :

2012

Fall Time (Typ) :

50 ns

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin/Copper (Sn/Cu)

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

10

Pbfree Code :

yes

Operating Temperature :

150°C TJ

FET Feature :

Logic Level Gate

Pulsed Drain Current-Max (IDM) :

16A

Drain to Source Breakdown Voltage :

-30V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drain-source On Resistance-Max :

0.056Ohm

Number of Pins :

8

Factory Lead Time :

20 Weeks

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Number of Elements :

2

FET Type :

2 P-Channel (Dual)

Drain to Source Voltage (Vdss) :

30V

Package / Case :

8-SMD, Flat Lead

Rise Time :

20ns

Drain Current-Max (Abs) (ID) :

4A

Continuous Drain Current (ID) :

4A

Turn On Delay Time :

8 ns

Rds On (Max) @ Id, Vgs :

56m Ω @ 4A, 10V

Max Power Dissipation :

550mW

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Number of Channels :

2

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 10V

JESD-609 Code :

e2

Transistor Application :

SWITCHING

Turn-Off Delay Time :

80 ns