QS8J12TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Power - Max :

550mW

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

550mW

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Factory Lead Time :

10 Weeks

Package / Case :

8-SMD, Flat Lead

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

12V

Vgs(th) (Max) @ Id :

1V @ 1mA

Continuous Drain Current (ID) :

4.5A

FET Feature :

Logic Level Gate, 1.5V Drive

Terminal Finish :

TIN COPPER

Transistor Element Material :

SILICON

Pbfree Code :

yes

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

29m Ω @ 4.5A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.029Ohm

Operating Temperature :

150°C TJ

DS Breakdown Voltage-Min :

12V

Published :

2015

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 6V

Time@Peak Reflow Temperature-Max (s) :

10

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Type :

2 P-Channel (Dual)

Number of Terminations :

8

ECCN Code :

EAR99

JESD-609 Code :

e2

Lead Free :

Lead Free