QS6M4TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

30V 20V

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.245Ohm

Pin Count :

6

Radiation Hardening :

No

HTS Code :

8541.29.00.95

Threshold Voltage :

1.5V

Factory Lead Time :

20 Weeks

ECCN Code :

EAR99

Continuous Drain Current (ID) :

1.5A

Number of Elements :

2

Turn-Off Delay Time :

45 ns

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

1.5V @ 1mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

6

Gate to Source Voltage (Vgs) :

12V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Max Power Dissipation :

1.25W

Mounting Type :

Surface Mount

Mount :

Surface Mount

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 10V

Transistor Application :

SWITCHING

Number of Terminations :

6

Fall Time (Typ) :

12 ns

Drain to Source Breakdown Voltage :

-20V

Published :

2006

Transistor Element Material :

SILICON

FET Type :

N and P-Channel

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.25W

Rise Time :

12ns

Element Configuration :

Dual

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

230m Ω @ 1.5A, 4.5V

Time@Peak Reflow Temperature-Max (s) :

10

Operating Temperature :

150°C TJ

JESD-609 Code :

e1

Current Rating :

1.5A

Gate Charge (Qg) (Max) @ Vgs :

1.6nC @ 4.5V

Terminal Form :

Gull wing

Base Part Number :

*M4

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL