QS6M4TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Threshold Voltage :

1.5V

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Rise Time :

12ns

Factory Lead Time :

20 Weeks

HTS Code :

8541.29.00.95

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 10V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Dual

Fall Time (Typ) :

12 ns

Package / Case :

SOT-23-6 Thin, TSOT-23-6

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

FET Type :

N and P-Channel

Max Power Dissipation :

1.25W

Drain-source On Resistance-Max :

0.245Ohm

Gate Charge (Qg) (Max) @ Vgs :

1.6nC @ 4.5V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Published :

2006

Power Dissipation :

1.25W

Number of Elements :

2

Gate to Source Voltage (Vgs) :

12V

FET Feature :

Logic Level Gate

Current Rating :

1.5A

Mount :

Surface Mount

Pbfree Code :

yes

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Pin Count :

6

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

10

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Base Part Number :

*M4

JESD-609 Code :

e1

Continuous Drain Current (ID) :

1.5A

Drain to Source Breakdown Voltage :

-20V

Turn-Off Delay Time :

45 ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

230m Ω @ 1.5A, 4.5V

Drain to Source Voltage (Vdss) :

30V 20V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Technology :

METAL-OXIDE SEMICONDUCTOR