QS6M3TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

900mW

Time@Peak Reflow Temperature-Max (s) :

10

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Number of Pins :

6

Turn-Off Delay Time :

45 ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1.25W

Pin Count :

6

Published :

2006

Gate to Source Voltage (Vgs) :

12V

Element Configuration :

Dual

Package / Case :

SOT-23-6 Thin, TSOT-23-6

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 10V

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

12 ns

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

-20V

Termination :

SMD/SMT

Rise Time :

12ns

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

1.5A

Drain to Source Voltage (Vdss) :

30V 20V

Peak Reflow Temperature (Cel) :

260

Current Rating :

1.5A

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Rds On (Max) @ Id, Vgs :

230m Ω @ 1.5A, 4.5V

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

JESD-609 Code :

e1

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Resistance :

360mOhm

Base Part Number :

*M3

Threshold Voltage :

1.5V

Radiation Hardening :

No

Dual Supply Voltage :

30V

Number of Terminations :

6

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

1.6nC @ 4.5V

Nominal Vgs :

1.5 V

Factory Lead Time :

25 Weeks

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Lead Free :

Lead Free