QS6K21TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

1.25W

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.25W

Number of Pins :

6

Rise Time :

8ns

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

1A

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Number of Elements :

2

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

6 ns

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2009

Factory Lead Time :

12 Weeks

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

45V

FET Type :

2 N-Channel (Dual)

Element Configuration :

Dual

FET Feature :

Standard

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

45V

Fall Time (Typ) :

8 ns

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

12V

Base Part Number :

*K21

Turn-Off Delay Time :

16 ns

Pbfree Code :

yes

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

1A

Number of Terminations :

6

Pin Count :

6

Drain to Source Resistance :

300mOhm

Package / Case :

SOT-23-6 Thin, TSOT-23-6

JESD-609 Code :

e1