QS6K1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

1A

Power Dissipation :

1.25W

Current Rating :

1A

Dual Supply Voltage :

30V

JESD-609 Code :

e1

Turn On Delay Time :

7 ns

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

77pF @ 10V

Drain to Source Breakdown Voltage :

30V

Termination :

SMD/SMT

Transistor Application :

SWITCHING

Pbfree Code :

yes

Number of Terminations :

6

Max Power Dissipation :

900mW

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

2.4nC @ 4.5V

Factory Lead Time :

20 Weeks

Element Configuration :

Dual

Voltage - Rated DC :

30V

FET Feature :

Logic Level Gate

ECCN Code :

EAR99

Turn-Off Delay Time :

15 ns

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Resistance :

364mOhm

Package / Case :

SOT-23-6 Thin, TSOT-23-6

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

12V

Threshold Voltage :

1.5V

Rds On (Max) @ Id, Vgs :

238m Ω @ 1A, 4.5V

Time@Peak Reflow Temperature-Max (s) :

10

Fall Time (Typ) :

7 ns

Base Part Number :

*K1

Rise Time :

7ns

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

1A

Number of Pins :

6

Operating Temperature :

150°C TJ

Nominal Vgs :

1.5 V

RoHS Status :

ROHS3 Compliant

Published :

2006

Packaging :

Tape and Reel (TR)

Pin Count :

6