QS6K1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

2.4nC @ 4.5V

Resistance :

364mOhm

Threshold Voltage :

1.5V

Turn-Off Delay Time :

15 ns

Transistor Application :

SWITCHING

FET Feature :

Logic Level Gate

Max Power Dissipation :

900mW

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Base Part Number :

*K1

Number of Terminations :

6

Dual Supply Voltage :

30V

Current Rating :

1A

Nominal Vgs :

1.5 V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 1mA

JESD-609 Code :

e1

Continuous Drain Current (ID) :

1A

Number of Elements :

2

Fall Time (Typ) :

7 ns

Number of Pins :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

1A

Factory Lead Time :

20 Weeks

Drain to Source Breakdown Voltage :

30V

Termination :

SMD/SMT

FET Type :

2 N-Channel (Dual)

Power Dissipation :

1.25W

Lead Free :

Lead Free

Rise Time :

7ns

Time@Peak Reflow Temperature-Max (s) :

10

Rds On (Max) @ Id, Vgs :

238m Ω @ 1A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

77pF @ 10V

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Published :

2006

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Turn On Delay Time :

7 ns

Element Configuration :

Dual

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

12V

Operating Temperature :

150°C TJ

Voltage - Rated DC :

30V

Pin Count :

6

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260