QS5W2TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

Number of Elements :

2

Number of Terminations :

5

Transistor Type :

2 NPN (Dual) Common Emitter

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 50mA 3V

Pin Count :

5

Collector Emitter Voltage (VCEO) :

350mV

Vce Saturation (Max) @ Ib, Ic :

350mV @ 50mA, 1A

Mount :

Surface Mount

Transistor Element Material :

SILICON

Transition Frequency :

320MHz

Published :

2015

Frequency - Transition :

320MHz

Operating Temperature :

150°C TJ

JESD-30 Code :

R-PDSO-G5

Transistor Application :

SWITCHING

Power - Max :

1.25W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Emitter Breakdown Voltage :

50V

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Max Collector Current :

3A

Factory Lead Time :

20 Weeks

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Current - Collector Cutoff (Max) :

1μA ICBO

Configuration :

COMMON EMITTER, 2 ELEMENTS

Max Power Dissipation :

1.25W

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount