QS5W1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Terminal Form :

Gull wing

Power - Max :

1.25W

Configuration :

COMMON EMITTER, 2 ELEMENTS

Factory Lead Time :

20 Weeks

Collector Emitter Voltage (VCEO) :

400mV

Collector Emitter Breakdown Voltage :

30V

Lead Free :

Lead Free

Transition Frequency :

270MHz

Max Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

1μA ICBO

Number of Terminations :

5

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

5

Max Collector Current :

3A

Frequency - Transition :

270MHz

Transistor Type :

2 NPN (Dual) Common Emitter

Vce Saturation (Max) @ Ib, Ic :

400mV @ 50mA, 1A

Transistor Application :

SWITCHING

Packaging :

Cut Tape (CT)

Pbfree Code :

yes

JESD-30 Code :

R-PDSO-G5

Operating Temperature :

150°C TJ

Published :

2011

Max Power Dissipation :

1.25W

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Number of Elements :

2

Qualification Status :

Not Qualified

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED