PZTA92T1G
- Mfr.Part #
- PZTA92T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A SOT223
- Stock
- 1,069
- In Stock :
- 1,069
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 300V
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 8 Weeks
- Power Dissipation :
- 1.5W
- Contact Plating :
- Tin
- Base Part Number :
- PZTA92
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Number of Pins :
- 4
- Termination :
- SMD/SMT
- Type :
- GENERAL PURPOSE
- Height :
- 1.57mm
- Width :
- 3.5mm
- Package / Case :
- TO-261-4, TO-261AA
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 1.5W
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Transition Frequency :
- 50MHz
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 300V
- Radiation Hardening :
- No
- Current Rating :
- -500mA
- hFE Min :
- 25
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Published :
- 1997
- Max Collector Current :
- 50mA
- Number of Terminations :
- 4
- Collector Base Voltage (VCBO) :
- 300V
- Voltage - Rated DC :
- -300V
- Gain Bandwidth Product :
- 50MHz
- Collector Emitter Voltage (VCEO) :
- 300V
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 50MHz
- Transistor Type :
- PNP
- Length :
- 6.5mm
- Packaging :
- Cut Tape (CT)
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Pin Count :
- 4
- Pbfree Code :
- yes
- Current - Collector (Ic) (Max) :
- 500mA
- Collector Emitter Saturation Voltage :
- -900mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Operating Temperature :
- 150°C TJ
- Datasheets
- PZTA92T1G

PNP 150°C TJ 250nA ICBO 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
PZTA92T1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 30mA 10V.With a collector emitter saturation voltage of -900mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 50mA volts at its maximum.
PZTA92T1G Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of -900mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
PZTA92T1G Applications
There are a lot of ON Semiconductor
PZTA92T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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