PZTA29

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-261-4, TO-261AA

Emitter Base Voltage (VEBO) :

12V

Transistor Element Material :

SILICON

Frequency - Transition :

125MHz

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

100V

Current - Collector Cutoff (Max) :

50nA

Configuration :

Single

Mount :

Surface Mount

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Published :

2005

Max Collector Current :

800mA

Mounting Type :

Surface Mount

Number of Terminations :

4

Voltage - Rated DC :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

1.2V

Power Dissipation :

1W

Collector Base Voltage (VCBO) :

100V

hFE Min :

10000

JESD-30 Code :

R-PDSO-G4

JESD-609 Code :

e3

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

100V

Current Rating :

800mA

Number of Elements :

1

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Base Part Number :

PZTA29

Weight :

188mg

Transition Frequency :

125MHz

ECCN Code :

EAR99

Lead Free :

Lead Free

Polarity :

NPN

Transistor Type :

NPN - Darlington

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

5 Weeks

Max Breakdown Voltage :

100V

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Max Power Dissipation :

1W