PZTA14,135
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- Mfr.Part #
- PZTA14,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- NOW NEXPERIA PZTA14 - SMALL SIGN
- Stock
- 3,049
- In Stock ：
- 3,049
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 30V
- Emitter Base Voltage (VEBO) :
- 10V
- Base Part Number :
- PZTA14
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Terminal Finish :
- Tin (Sn)
- Series :
- Automotive, AEC-Q101
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA
- Power - Max :
- 1.25W
- Number of Terminations :
- 4
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN - Darlington
- Pin Count :
- 4
- Frequency - Transition :
- 125MHz
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PDSO-G4
- Collector Emitter Voltage (VCEO) :
- 30V
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Polarity :
- NPN
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- 1.5V
- Element Configuration :
- Single
- Transition Frequency :
- 125MHz
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Published :
- 2009
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 73
- Max Power Dissipation :
- 1.25W
- Package / Case :
- TO-261-4, TO-261AA
- Datasheets
- PZTA14,135
PZTA14,135 Documents
NPN - Darlington 150°C TJ 100nA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PZTA14,135 Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.As you can see, the part has a transition frequency of 125MHz.A maximum collector current of 500mA volts is possible.
PZTA14,135 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz
PZTA14,135 Applications
There are a lot of Nexperia USA Inc.
PZTA14,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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