PZTA14,135
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- Mfr.Part #
- PZTA14,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- NOW NEXPERIA PZTA14 - SMALL SIGN
- Stock
- 3,049
- In Stock ：
- 3,049
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- JESD-30 Code :
- R-PDSO-G4
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1.25W
- Package / Case :
- TO-261-4, TO-261AA
- Emitter Base Voltage (VEBO) :
- 10V
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Number of Pins :
- 73
- Current - Collector Cutoff (Max) :
- 100nA
- Polarity :
- NPN
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Max Collector Current :
- 500mA
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 1.25W
- Base Part Number :
- PZTA14
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Pin Count :
- 4
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 1.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 125MHz
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Series :
- Automotive, AEC-Q101
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Number of Terminations :
- 4
- Frequency - Transition :
- 125MHz
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN - Darlington
- Collector Emitter Voltage (VCEO) :
- 30V
- Published :
- 2009
- Datasheets
- PZTA14,135
PZTA14,135 Documents
NPN - Darlington 150°C TJ 100nA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PZTA14,135 Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.As you can see, the part has a transition frequency of 125MHz.A maximum collector current of 500mA volts is possible.
PZTA14,135 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz
PZTA14,135 Applications
There are a lot of Nexperia USA Inc.
PZTA14,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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