PZTA14E6327HTSA1
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- Mfr.Part #
- PZTA14E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.3A SOT223-4
- Stock
- 42,223
- In Stock ：
- 42,223
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 125MHz
- Max Power Dissipation :
- 1.5W
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 1.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-261-4, TO-261AA
- Radiation Hardening :
- No
- Number of Terminations :
- 4
- Collector Emitter Breakdown Voltage :
- 30V
- ECCN Code :
- EAR99
- Transition Frequency :
- 125MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 30V
- Power - Max :
- 1.5W
- Transistor Type :
- NPN - Darlington
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 10V
- Polarity :
- NPN
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 20000
- Case Connection :
- COLLECTOR
- Base Part Number :
- PZTA14
- Number of Pins :
- 4
- Published :
- 2011
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 300mA
- Datasheets
- PZTA14E6327HTSA1
NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PZTA14E6327HTSA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Parts of this part have transition frequencies of 125MHz.During maximum operation, collector current can be as low as 300mA volts.
PZTA14E6327HTSA1 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz
PZTA14E6327HTSA1 Applications
There are a lot of Infineon Technologies
PZTA14E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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