PQMH9Z

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Case Connection :

COLLECTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 5mA 5V

JESD-30 Code :

R-PDSO-N6

Resistor - Emitter Base (R2) :

47k Ω

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 4.7

Package / Case :

6-XFDFN Exposed Pad

Frequency - Transition :

230MHz

Collector Emitter Voltage (VCEO) :

100mV

Reference Standard :

AEC-Q101; IEC-60134

Number of Terminations :

6

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Transistor Type :

2 NPN - Pre-Biased (Dual)

Contact Plating :

Tin

Published :

2015

Number of Pins :

8

Terminal Form :

NO LEAD

Number of Elements :

2

Resistor - Base (R1) :

10k Ω

Element Configuration :

Dual

Max Power Dissipation :

230mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Collector Current :

100mA

Polarity/Channel Type :

NPN

Series :

Automotive, AEC-Q101

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Factory Lead Time :

4 Weeks

Max Operating Temperature :

150°C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

1μA

Transition Frequency :

230MHz