PQMH10Z

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

JESD-30 Code :

R-PDSO-N6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reference Standard :

AEC-Q101; IEC-60134

Frequency - Transition :

230MHz

Number of Elements :

2

Pin Count :

6

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Package / Case :

6-XFDFN Exposed Pad

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Resistor - Base (R1) :

2.2k Ω

Collector Emitter Voltage (VCEO) :

100mV

Mounting Type :

Surface Mount

Max Collector Current :

100mA

Terminal Form :

NO LEAD

Current - Collector Cutoff (Max) :

1μA

Power - Max :

350mW

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 21

Case Connection :

COLLECTOR

Factory Lead Time :

4 Weeks

Series :

Automotive, AEC-Q101

Collector Emitter Breakdown Voltage :

50V

Transistor Type :

2 NPN - Pre-Biased (Dual)

RoHS Status :

ROHS3 Compliant

Published :

2017

Max Power Dissipation :

350mW

Polarity/Channel Type :

NPN

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Resistor - Emitter Base (R2) :

47k Ω

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Transition Frequency :

230MHz