PQMH2Z

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

Automotive, AEC-Q101

Packaging :

Tape and Reel (TR)

Package / Case :

6-XFDFN Exposed Pad

Collector Emitter Voltage (VCEO) :

150mV

Factory Lead Time :

4 Weeks

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

1μA

Reference Standard :

AEC-Q101; IEC-60134

Polarity/Channel Type :

NPN

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Case Connection :

COLLECTOR

JESD-30 Code :

R-PDSO-N6

Resistor - Base (R1) :

47k Ω

Power - Max :

230mW

Frequency - Transition :

230MHz

Number of Terminations :

6

Terminal Form :

NO LEAD

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Published :

2015

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Pin Count :

6

Transition Frequency :

230MHz

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Resistor - Emitter Base (R2) :

47k Ω

Max Power Dissipation :

230mW

Collector Emitter Breakdown Voltage :

50V

Transistor Type :

2 NPN - Pre-Biased (Dual)

Number of Elements :

2