PN2907BU
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- Mfr.Part #
- PN2907BU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.8A TO92-3
- Stock
- 6,071
- In Stock ：
- 6,071
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 40V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Published :
- 1997
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Number of Elements :
- 1
- Factory Lead Time :
- 2 Weeks
- Transition Frequency :
- 200MHz
- Max Collector Current :
- 800mA
- Max Power Dissipation :
- 625mW
- Power Dissipation :
- 625mW
- Turn On Time-Max (ton) :
- 45ns
- Terminal Finish :
- Tin
- Transistor Type :
- PNP
- Weight :
- 179mg
- Voltage - Rated DC :
- -60V
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Height :
- 5.33mm
- Width :
- 4.19mm
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 1.6V
- Peak Reflow Temperature (Cel) :
- 260
- Max Frequency :
- 1MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Current Rating :
- -500mA
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Base Part Number :
- PN2907
- Length :
- 5.2mm
- Collector Base Voltage (VCBO) :
- -60V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- hFE Min :
- 100
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- PN2907BU
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
PN2907BU Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.6V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
PN2907BU Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 200MHz
PN2907BU Applications
There are a lot of ON Semiconductor
PN2907BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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