PN2907ABU
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- Mfr.Part #
- PN2907ABU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.8A TO92-3
- Stock
- 3,597
- In Stock ：
- 3,597
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Height :
- 4.7mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Base Part Number :
- PN2907A
- Weight :
- 179mg
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Length :
- 4.7mm
- Collector Emitter Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Published :
- 2007
- Gain Bandwidth Product :
- 200MHz
- Max Collector Current :
- 800mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 400mV
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- Turn On Time-Max (ton) :
- 45ns
- Transition Frequency :
- 200MHz
- Voltage - Rated DC :
- -60V
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Power Dissipation :
- 625mW
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- Current Rating :
- -800mA
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Mount :
- Through Hole
- Max Power Dissipation :
- 625mW
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Base Voltage (VCBO) :
- -60V
- Frequency :
- 200MHz
- Transistor Type :
- PNP
- hFE Min :
- 100
- Factory Lead Time :
- 7 Weeks
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Width :
- 3.93mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- -5V
- Datasheets
- PN2907ABU
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
PN2907ABU Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 400mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-800mA).200MHz is present in the transition frequency.Maximum collector currents can be below 800mA volts.
PN2907ABU Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz
PN2907ABU Applications
There are a lot of ON Semiconductor
PN2907ABU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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