PN2907ANLBU
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- Mfr.Part #
- PN2907ANLBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.8A TO92-3
- Stock
- 20,723
- In Stock ：
- 20,723
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Frequency - Transition :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 800mA
- Base Part Number :
- PN2907A
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP
- Power - Max :
- 625mW
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Datasheets
- PN2907ANLBU
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 20nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
PN2907ANLBU Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.There is a 60V maximal voltage in the device due to collector-emitter breakdown.
PN2907ANLBU Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
PN2907ANLBU Applications
There are a lot of ON Semiconductor
PN2907ANLBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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