PN2907ABU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency :

200MHz

Length :

4.7mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Element Material :

SILICON

Height :

4.7mm

Emitter Base Voltage (VEBO) :

-5V

Lead Free :

Lead Free

Voltage - Rated DC :

-60V

hFE Min :

100

Collector Emitter Breakdown Voltage :

60V

Factory Lead Time :

7 Weeks

Element Configuration :

Single

Number of Pins :

3

Max Collector Current :

800mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Published :

2007

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Weight :

179mg

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

20nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Transistor Application :

SWITCHING

Packaging :

Bulk

Collector Emitter Voltage (VCEO) :

60V

RoHS Status :

ROHS3 Compliant

Width :

3.93mm

JESD-609 Code :

e3

Gain Bandwidth Product :

200MHz

Turn On Time-Max (ton) :

45ns

Mount :

Through Hole

Transition Frequency :

200MHz

Terminal Position :

BOTTOM

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

625mW

Power Dissipation :

625mW

Collector Base Voltage (VCBO) :

-60V

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

400mV

Polarity/Channel Type :

PNP

Base Part Number :

PN2907A

Number of Terminations :

3

Contact Plating :

Tin

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

ECCN Code :

EAR99

Current Rating :

-800mA

Number of Elements :

1