PN2907ATFR
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- Mfr.Part #
- PN2907ATFR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.8A TO92-3
- Stock
- 7,720
- In Stock ：
- 7,720
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -1.6V
- Published :
- 2007
- Length :
- 5.2mm
- Transition Frequency :
- 200MHz
- Collector Base Voltage (VCBO) :
- -60V
- Turn On Time-Max (ton) :
- 45ns
- Number of Pins :
- 3
- Number of Elements :
- 1
- Voltage - Rated DC :
- -60V
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Weight :
- 240mg
- Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Max Collector Current :
- 800mA
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- PNP
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Max Breakdown Voltage :
- 60V
- Factory Lead Time :
- 6 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 4.19mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Through Hole
- Frequency :
- 200MHz
- Gain Bandwidth Product :
- 200MHz
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 60V
- Height :
- 5.33mm
- Transistor Element Material :
- SILICON
- Base Part Number :
- PN2907A
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- hFE Min :
- 100
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Max Power Dissipation :
- 625mW
- Current Rating :
- -800mA
- Datasheets
- PN2907ATFR
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
PN2907ATFR Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.With a collector emitter saturation voltage of -1.6V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -800mA.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 800mA volts at its maximum.
PN2907ATFR Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz
PN2907ATFR Applications
There are a lot of ON Semiconductor
PN2907ATFR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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