PN2907ATF
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- Mfr.Part #
- PN2907ATF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.8A TO92-3
- Stock
- 28,900
- In Stock ：
- 28,900
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Frequency :
- 200MHz
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Published :
- 2017
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Transition Frequency :
- 200MHz
- Factory Lead Time :
- 7 Weeks
- Voltage - Rated DC :
- -60V
- Turn On Time-Max (ton) :
- 45ns
- Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 60V
- Length :
- 5.2mm
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Current Rating :
- -800mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 200MHz
- hFE Min :
- 100
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Max Breakdown Voltage :
- 60V
- Weight :
- 240mg
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 5.33mm
- Collector Emitter Saturation Voltage :
- -1.6V
- Emitter Base Voltage (VEBO) :
- -5V
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Base Part Number :
- PN2907A
- Max Power Dissipation :
- 625mW
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Collector Base Voltage (VCBO) :
- -60V
- Max Collector Current :
- 800mA
- Width :
- 4.19mm
- Datasheets
- PN2907ATF
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
PN2907ATF Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1.6V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -800mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
PN2907ATF Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz
PN2907ATF Applications
There are a lot of ON Semiconductor
PN2907ATF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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