PN2907ATA
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- Mfr.Part #
- PN2907ATA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.8A TO92-3
- Stock
- 34,107
- In Stock ：
- 34,107
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Elements :
- 1
- Frequency :
- 200MHz
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transition Frequency :
- 200MHz
- Polarity/Channel Type :
- PNP
- Current Rating :
- -800mA
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- -60V
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 625mW
- Collector Emitter Saturation Voltage :
- -1.6V
- Turn On Time-Max (ton) :
- 45ns
- Width :
- 4.19mm
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Max Collector Current :
- 800mA
- Packaging :
- Tape and Box (TB)
- Number of Pins :
- 3
- Factory Lead Time :
- 6 Weeks
- Power Dissipation :
- 625mW
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 240mg
- Published :
- 2007
- Length :
- 5.2mm
- Max Breakdown Voltage :
- 60V
- Base Part Number :
- PN2907A
- Collector Emitter Breakdown Voltage :
- 60V
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Height :
- 5.33mm
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Voltage - Rated DC :
- -60V
- hFE Min :
- 100
- Emitter Base Voltage (VEBO) :
- -5V
- Datasheets
- PN2907ATA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
PN2907ATAR Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -1.6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -800mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
PN2907ATAR Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz
PN2907ATAR Applications
There are a lot of ON Semiconductor
PN2907ATAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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