PMV56XN,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

85m Ω @ 3.6A, 4.5V

Power Dissipation-Max :

1.92W Tc

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

40

HTS Code :

8541.29.00.75

Operating Temperature :

-65°C~150°C TJ

Published :

1997

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Pin Count :

3

Number of Terminations :

3

DS Breakdown Voltage-Min :

20V

Vgs (Max) :

±8V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-G3

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

2.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

650mV @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 10V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

3.76A Tc

JEDEC-95 Code :

TO-236AB

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Surface Mount :

yes

Series :

TrenchMOS™

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 4.5V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.085Ohm

Number of Elements :

1

Terminal Position :

Dual

FET Type :

N-Channel

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)