PMV52ENER

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

Single

Power Dissipation (Max) :

630mW (Ta), 5.7W (Tc)

Current - Continuous Drain (Id) @ 25°C :

3.2A (Ta)

Manufacturer :

Nexperia

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

3.3 nC @ 10 V

Operating Temperature :

-55°C ~ 175°C (TJ)

FET Feature :

-

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Maximum Operating Temperature :

+ 175 C

Drain to Source Voltage (Vdss) :

30 V

Supplier Device Package :

TO-236AB

Rise Time :

13 ns

Qualification :

-

Subcategory :

MOSFETs

Transistor Polarity :

N-Channel

RoHS :

Details

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation :

630mW

Channel Type :

N Channel

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

100 pF @ 15 V

MSL :

MSL 1 - Unlimited

Product Status :

Active

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

70mOhm @ 3.2A, 10V

Minimum Operating Temperature :

- 55 C

Vgs (Max) :

±20V

Continuous Drain Current Id :

3.2A

Mounting Style :

SMD/SMT

Brand :

Nexperia

Series :

-

Number of Channels :

1 Channel

Product Type :

MOSFET

Channel Mode :

Enhancement

Package :

Digi-Reel?