PMV50ENEAR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Continuous Drain Current (ID) :

3.9A

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

30V

Series :

Automotive, AEC-Q101

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Power Dissipation-Max :

510mW Ta 3.9W Tc

DS Breakdown Voltage-Min :

30V

JESD-30 Code :

R-PDSO-G3

Mount :

Surface Mount

Factory Lead Time :

4 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

276pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

3.9A Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.043Ohm

Transistor Element Material :

SILICON

Published :

2016

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Reference Standard :

AEC-Q101; IEC-60134

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

43m Ω @ 3.9A, 10V

JEDEC-95 Code :

TO-236AB

FET Type :

N-Channel

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 250μA