PMV50UPEVL

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.066Ohm

Power Dissipation-Max :

500mW Ta

Transistor Element Material :

SILICON

Published :

2013

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pin Count :

3

Surface Mount :

yes

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

DS Breakdown Voltage-Min :

20V

Input Capacitance (Ciss) (Max) @ Vds :

24pF @ 10V

Factory Lead Time :

4 Weeks

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

3.2A

Rds On (Max) @ Id, Vgs :

66m Ω @ 3.2A, 4.5V

Vgs(th) (Max) @ Id :

900mV @ 250μA

Terminal Position :

Dual

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

JESD-30 Code :

R-PDSO-G3

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

15.7nC @ 4.5V

JEDEC-95 Code :

TO-236AB

Reference Standard :

IEC-60134

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V