PMV50XPR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

744pF @ 20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

900mV @ 250μA

JEDEC-95 Code :

TO-236AB

Factory Lead Time :

4 Weeks

Reference Standard :

IEC-60134

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Pin Count :

3

Transistor Element Material :

SILICON

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Packaging :

Cut Tape (CT)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Drain Current (ID) :

3.6A

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

20V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±12V

Power Dissipation-Max :

490mW Ta 4.63W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.06Ohm

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Rds On (Max) @ Id, Vgs :

60m Ω @ 3.6A, 4.5V

Mount :

Surface Mount

FET Type :

P-Channel

JESD-30 Code :

R-PDSO-G3

Drain to Source Voltage (Vdss) :

20V