PMV55ENEAR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

646pF @ 30V

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

3.1A Ta

Number of Elements :

1

FET Type :

N-Channel

Number of Pins :

3

Terminal Finish :

Tin

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

60V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

3.1A

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Factory Lead Time :

4 Weeks

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.06Ohm

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

60m Ω @ 3.1A, 10V

Power Dissipation-Max :

478mW Ta 8.36W Tc

Series :

Automotive, AEC-Q101

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

60V

Pin Count :

3

Published :

2014