PMV55ENEAR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

3.1A

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

60V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pin Count :

3

Series :

Automotive, AEC-Q101

Published :

2014

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.06Ohm

Vgs (Max) :

±20V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Mount :

Surface Mount

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

60m Ω @ 3.1A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Number of Pins :

3

Terminal Position :

Dual

DS Breakdown Voltage-Min :

60V

Power Dissipation-Max :

478mW Ta 8.36W Tc

Factory Lead Time :

4 Weeks

Number of Elements :

1

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

3.1A Ta

Terminal Finish :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

646pF @ 30V