PMV33UPE215
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- Mfr.Part #
- PMV33UPE215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NOW NEXPERIA PMV33UPE - SMALL SI
- Stock
- 55,197
- In Stock ：
- 55,197
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Fall Time (Typ) :
- 39 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 22.1nC @ 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Max Dual Supply Voltage :
- -20V
- Rise Time :
- 30ns
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 950mV @ 250μA
- Radiation Hardening :
- No
- FET Type :
- P-Channel
- Turn On Delay Time :
- 11 ns
- Published :
- 2012
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 1820pF @ 10V
- Turn-Off Delay Time :
- 83 ns
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±8V
- Rds On (Max) @ Id, Vgs :
- 36m Ω @ 3A, 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Ta
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation-Max :
- 490mW Ta
- Continuous Drain Current (ID) :
- 4.4A
- Drain to Source Voltage (Vdss) :
- 20V
- Gate to Source Voltage (Vgs) :
- 8V
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Datasheets
- PMV33UPE215
Specialized ICs NXP Semiconductors PMV33UPE215 Overview
The Specialized ICs NXP Semiconductors PMV33UPE215 is a high-performance P-Channel MOSFET designed for efficient power management in a compact package. With a low on-resistance of 36m Ω at a 4.5V drive, this component offers excellent thermal performance and reliability for high-efficiency applications. The device supports a drain-source voltage of 20V and can handle a continuous drain current of up to 3A, making it an ideal choice for power-sensitive and space-constrained applications. Its gate-source voltage stands at ±8V, highlighting its robustness in varied operating conditions. With a total gate charge of 22.1nC at 4.5V, this MOSFET ensures rapid switching, reducing power losses and improving overall system efficiency.
Specialized ICs NXP Semiconductors PMV33UPE215 Key Features
The PMV33UPE215 boasts several key features that make it stand out:
- Low on-resistance of 36m Ω at 4.5V, enabling high efficiency
- Continuous drain current (ID) of 3A, suitable for heavy-load applications
- Gate-source voltage of ±8V, offering flexibility in various electrical environments
- High capacitance of 1820pF at 10V, providing robust power handling capabilities
- Compact TO-236-3, SC-59, SOT-23-3 package, perfect for space-constrained applications
Specialized ICs NXP Semiconductors PMV33UPE215 Applications
The PMV33UPE215 is versatile enough for use in various applications, such as:
- Synchronous Rectification in ATX, Server, and Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverters
- DC/DC converters
- Power tools
- Battery Protection Circuits
- Telecom and Server Power Supplies
- Industrial Power Supplies
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