PMV33UPE215

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Power Dissipation-Max :

490mW Ta

Continuous Drain Current (ID) :

4.4A

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

22.1nC @ 4.5V

Vgs(th) (Max) @ Id :

950mV @ 250μA

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs (Max) :

±8V

Mounting Type :

Surface Mount

Published :

2012

Factory Lead Time :

4 Weeks

Turn On Delay Time :

11 ns

Rise Time :

30ns

Radiation Hardening :

No

Fall Time (Typ) :

39 ns

Gate to Source Voltage (Vgs) :

8V

Turn-Off Delay Time :

83 ns

Input Capacitance (Ciss) (Max) @ Vds :

1820pF @ 10V

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

36m Ω @ 3A, 4.5V

Max Dual Supply Voltage :

-20V

FET Type :

P-Channel

Pin Count :

3

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Current - Continuous Drain (Id) @ 25°C :

4.4A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ