PHP225,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

250m Ω @ 1A, 10V

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Operating Temperature :

150°C TJ

Number of Pins :

8

Drain to Source Breakdown Voltage :

-30V

FET Type :

2 P-Channel (Dual)

Pin Count :

8

Number of Terminations :

8

FET Feature :

Logic Level Gate

Time@Peak Reflow Temperature-Max (s) :

30

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Surface Mount :

yes

Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Max Power Dissipation :

2W

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Published :

2011

Mounting Type :

Surface Mount

Factory Lead Time :

16 Weeks

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

JESD-609 Code :

e4

Number of Elements :

2

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Lead Free :

Lead Free

Continuous Drain Current (ID) :

2.3A

Max Dual Supply Voltage :

-30V

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 20V

Drain to Source Voltage (Vdss) :

30V

JEDEC-95 Code :

MS-012AA

Packaging :

Tape and Reel (TR)