PHP21N06LT,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Package / Case :

TO-220-3

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Additional Feature :

LOGIC LEVEL COMPATIBLE, FAST SWITCHING

Avalanche Energy Rating (Eas) :

34 mJ

Vgs (Max) :

±15V

Transistor Element Material :

SILICON

Surface Mount :

No

Drain to Source Voltage (Vdss) :

55V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

JESD-609 Code :

e3

Series :

TrenchMOS™

DS Breakdown Voltage-Min :

55V

Published :

1999

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 5V

Drain Current-Max (Abs) (ID) :

19A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

70m Ω @ 10A, 10V

Source Url Status Check Date :

2013-06-14 00:00:00

Packaging :

Tube

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

56W Tc

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Drain-source On Resistance-Max :

0.075Ohm

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Through Hole

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

76A

Pin Count :

3

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED