PHP20NQ20T,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Avalanche Energy Rating (Eas) :

252 mJ

Vgs(th) (Max) @ Id :

4V @ 1mA

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.13Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

80A

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

TrenchMOS™

Drain to Source Voltage (Vdss) :

200V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

20A

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2470pF @ 25V

HTS Code :

8541.29.00.75

Surface Mount :

No

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

DS Breakdown Voltage-Min :

200V

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

130m Ω @ 10A, 10V

Packaging :

Tube

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Published :

2010

Number of Terminations :

3

Power Dissipation-Max :

150W Tc

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V