PHP20N06T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Continuous Drain Current (ID) :

20A

Length :

10.3mm

Power Dissipation :

62W

Packaging :

Tube

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

20.3A Tc

Turn On Delay Time :

10 ns

Transistor Application :

SWITCHING

Number of Elements :

1

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 1mA

Width :

4.7mm

Vgs (Max) :

±20V

Number of Terminations :

3

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

81A

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.075Ohm

Rds On (Max) @ Id, Vgs :

75m Ω @ 10A, 10V

Power Dissipation-Max :

62W Tc

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Turn-Off Delay Time :

70 ns

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Max Dual Supply Voltage :

55V

ECCN Code :

EAR99

Number of Pins :

3

Published :

2000

Rise Time :

50ns

Factory Lead Time :

12 Weeks

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

55V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

9.4mm

Input Capacitance (Ciss) (Max) @ Vds :

483pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchMOS™

Transistor Element Material :

SILICON

Element Configuration :

Single

Fall Time (Typ) :

40 ns

HTS Code :

8541.29.00.75