PEMT1,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Element Material :

SILICON

Power - Max :

300mW

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Published :

2009

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Operating Temperature :

150°C TJ

Frequency - Transition :

100MHz

Pin Count :

6

Max Collector Current :

100mA

Number of Elements :

2

Transition Frequency :

100MHz

Number of Terminations :

6

Max Power Dissipation :

300mW

Mounting Type :

Surface Mount

Radiation Hardening :

No

Transistor Type :

2 PNP (Dual)

Polarity :

PNP

Collector Emitter Breakdown Voltage :

40V

Terminal Form :

Flat

Collector Base Voltage (VCBO) :

50V

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

200mV

Configuration :

SEPARATE, 2 ELEMENTS

Package / Case :

SOT-563, SOT-666

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Factory Lead Time :

4 Weeks

Current - Collector Cutoff (Max) :

100nA ICBO