PEMT1,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

Power - Max :

300mW

Package / Case :

SOT-563, SOT-666

Collector Emitter Voltage (VCEO) :

200mV

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Published :

2009

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

50V

Number of Terminations :

6

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Transistor Type :

2 PNP (Dual)

Configuration :

SEPARATE, 2 ELEMENTS

Transition Frequency :

100MHz

Terminal Form :

Flat

Pin Count :

6

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

PNP

Collector Emitter Breakdown Voltage :

40V

Number of Pins :

6

Max Collector Current :

100mA

Max Power Dissipation :

300mW

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

100nA ICBO

Factory Lead Time :

4 Weeks

Frequency - Transition :

100MHz

Packaging :

Tape and Reel (TR)