PEMT1,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Polarity :

PNP

Current - Collector Cutoff (Max) :

100nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Published :

2009

Contact Plating :

Tin

Transistor Application :

SWITCHING

Collector Base Voltage (VCBO) :

50V

Transistor Element Material :

SILICON

Power - Max :

300mW

Lead Free :

Lead Free

Max Power Dissipation :

200mW

Power Dissipation :

200mW

Max Breakdown Voltage :

40V

Number of Terminations :

6

Gain Bandwidth Product :

100MHz

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Pin Count :

6

ECCN Code :

EAR99

Height :

600μm

Length :

1.7mm

Number of Elements :

2

Transistor Type :

2 PNP (Dual)

Factory Lead Time :

4 Weeks

Width :

1.3mm

Collector Emitter Breakdown Voltage :

40V

Element Configuration :

Dual

Collector Emitter Voltage (VCEO) :

40V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Package / Case :

SOT-563, SOT-666

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

Collector Emitter Saturation Voltage :

200mV

hFE Min :

120

Mounting Type :

Surface Mount

Max Collector Current :

100mA

JESD-609 Code :

e3

Frequency :

100MHz

Emitter Base Voltage (VEBO) :

5V

Transition Frequency :

100MHz

Mount :

Surface Mount

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6