PEMT1,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Published :

2009

Collector Base Voltage (VCBO) :

50V

Height :

600μm

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

100nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Number of Terminations :

6

Factory Lead Time :

4 Weeks

Mount :

Surface Mount

Power Dissipation :

200mW

Collector Emitter Saturation Voltage :

200mV

Number of Pins :

6

Operating Temperature :

150°C TJ

Pin Count :

6

Polarity :

PNP

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Surface Mount

Transition Frequency :

100MHz

Package / Case :

SOT-563, SOT-666

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

40V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Max Collector Current :

100mA

Lead Free :

Lead Free

Max Power Dissipation :

200mW

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

120

Length :

1.7mm

Contact Plating :

Tin

Transistor Type :

2 PNP (Dual)

Collector Emitter Breakdown Voltage :

40V

Transistor Element Material :

SILICON

Frequency :

100MHz

ECCN Code :

EAR99

Width :

1.3mm

Number of Elements :

2

Power - Max :

300mW

Gain Bandwidth Product :

100MHz

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Collector Emitter Voltage (VCEO) :

40V