PEMT1,315

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Mounting Type :

Surface Mount

Number of Elements :

2

Terminal Form :

Flat

Operating Temperature :

150°C TJ

Polarity :

PNP

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

100nA ICBO

Frequency - Transition :

100MHz

Collector Emitter Voltage (VCEO) :

200mV

Published :

2009

Number of Pins :

6

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Collector Emitter Breakdown Voltage :

40V

Factory Lead Time :

4 Weeks

Transistor Application :

SWITCHING

Number of Terminations :

6

Transition Frequency :

100MHz

Collector Base Voltage (VCBO) :

50V

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

JESD-609 Code :

e3

Max Power Dissipation :

300mW

Mount :

Surface Mount

Transistor Type :

2 PNP (Dual)

RoHS Status :

ROHS3 Compliant

Power - Max :

300mW

Configuration :

SEPARATE, 2 ELEMENTS

Package / Case :

SOT-563, SOT-666

Terminal Finish :

Tin (Sn)